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Tubular 3D Resistive Random Access Memory Based on Rolled-Up h-BN Tube.
Hou, Xiang; Pan, Ruobing; Yu, Qiang; Zhang, Kai; Huang, Gaoshan; Mei, Yongfeng; Zhang, David Wei; Zhou, Peng.
Afiliação
  • Hou X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Pan R; Department of Materials, Fudan University, Shanghai, 200433, China.
  • Yu Q; Suzhou Institute of Nano-Tech and Nano Bionics, CAS, Jiangsu, 215123, China.
  • Zhang K; Suzhou Institute of Nano-Tech and Nano Bionics, CAS, Jiangsu, 215123, China.
  • Huang G; Department of Materials, Fudan University, Shanghai, 200433, China.
  • Mei Y; Department of Materials, Fudan University, Shanghai, 200433, China.
  • Zhang DW; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Zhou P; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Small ; 15(5): e1803876, 2019 Feb.
Article em En | MEDLINE | ID: mdl-30624032
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Ano de publicação: 2019 Tipo de documento: Article