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Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers.
Li, Zong-Lin; Lin, Shen-Chieh; Lin, Gray; Cheng, Hui-Wen; Sun, Kien-Wen; Lee, Chien-Ping.
Afiliação
  • Li ZL; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan. martin323261@gmail.com.
  • Lin SC; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan. z810481@gmail.com.
  • Lin G; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan. graylin@mail.nctu.edu.tw.
  • Cheng HW; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan. hwcheng2011@gmail.com.
  • Sun KW; Center for Nano Science and Technology, National Chiao Tung University, Hsinchu City 30010, Taiwan. hwcheng2011@gmail.com.
  • Lee CP; Department of Applied Chemistry, National Chiao Tung University, Hsinchu City 30010, Taiwan. kwsun@mail.nctu.edu.tw.
Micromachines (Basel) ; 10(3)2019 Mar 14.
Article em En | MEDLINE | ID: mdl-30875813
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2019 Tipo de documento: Article