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Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin-Orbit Torque by a MoS2 Layer.
Xie, Qidong; Lin, Weinan; Yang, Baishun; Shu, Xinyu; Chen, Shaohai; Liu, Liang; Yu, Xiaojiang; Breese, Mark B H; Zhou, Tiejun; Yang, Ming; Zhang, Zheng; Wang, Shijie; Yang, Hongxin; Chai, Jianwei; Han, Xiufeng; Chen, Jingsheng.
Afiliação
  • Xie Q; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Lin W; Department of Electronic Material, Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
  • Yang B; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Shu X; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
  • Chen S; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
  • Liu L; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Yu X; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Breese MBH; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Zhou T; Singapore Synchrotron Light Source, National University of Singapore, Singapore, 117575, Singapore.
  • Yang M; Singapore Synchrotron Light Source, National University of Singapore, Singapore, 117575, Singapore.
  • Zhang Z; College of electronics and information, Hangzhou Dianzi University, Hangzhou, 310018, China.
  • Wang S; Department of Electronic Material, Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
  • Yang H; Department of Electronic Material, Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
  • Chai J; Department of Electronic Material, Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
  • Han X; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
  • Chen J; Department of Electronic Material, Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
Adv Mater ; 31(21): e1900776, 2019 May.
Article em En | MEDLINE | ID: mdl-30957913
ABSTRACT
2D transition metal dichalcogenides have attracted much attention in the field of spintronics due to their rich spin-dependent properties. The promise of highly compact and low-energy-consumption spin-orbit torque (SOT) devices motivates the search for structures and materials that can satisfy the requirements of giant perpendicular magnetic anisotropy (PMA) and large SOT simultaneously in SOT-based magnetic memory. Here, it is demonstrated that PMA and SOT in a heavy metal/transition metal ferromagnet structure, Pt/[Co/Ni]2 , can be greatly enhanced by introducing a molybdenum disulfide (MoS2 ) underlayer. According to first-principles calculation and X-ray absorption spectroscopy (XAS), the enhancement of the PMA is ascribed to the modification of the orbital hybridization at the interface of Pt/Co due to MoS2 . The enhancement of SOT by the role played by MoS2 is explained, which is strongly supported by the identical behavior of SOT and PMA as a function of Pt thickness. This work provides new possibilities to integrate 2D materials into promising spintronics devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article