Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration.

Cha, Tae Min; Jo, Hyun Chan; Kwon, Hyug Su; Choi, Woo Young

Cha, Tae Min; Jo, Hyun Chan; Kwon, Hyug Su; Choi, Woo Young.

Afiliação

Cha TM; Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.
Jo HC; Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.
Kwon HS; Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.
Choi WY; Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.

J Nanosci Nanotechnol ; 19(10): 6123-6127, 2019 10 01.

Article em En | MEDLINE | ID: mdl-31026920

Assuntos

Semicondutores; Dióxido de Silício; Metais; Óxidos

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Semicondutores / Dióxido de Silício Idioma: En Ano de publicação: 2019 Tipo de documento: Article

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