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Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition.
Rahman, Md Mamunur; Kim, Jun-Gyu; Kim, Dae-Hyun; Kim, Tae-Woo.
Afiliação
  • Rahman MM; School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea. rahman.mamun37@gmail.com.
  • Kim JG; School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea. mhg095321@gmail.com.
  • Kim DH; School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea. dae-hyun.kim@ee.knu.ac.kr.
  • Kim TW; School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea. twkim78@ulsan.ac.kr.
Micromachines (Basel) ; 10(6)2019 May 30.
Article em En | MEDLINE | ID: mdl-31151234
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article