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Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube.
Bohaichuk, Stephanie M; Muñoz Rojo, Miguel; Pitner, Gregory; McClellan, Connor J; Lian, Feifei; Li, Jason; Jeong, Jaewoo; Samant, Mahesh G; Parkin, Stuart S P; Wong, H-S Philip; Pop, Eric.
Afiliação
  • Bohaichuk SM; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Muñoz Rojo M; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Pitner G; Department of Thermal and Fluid Engineering , University of Twente , 7500 AE Enschede , The Netherlands.
  • McClellan CJ; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Lian F; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Li J; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Jeong J; Asylum Research , Santa Barbara , California 93117 , United States.
  • Samant MG; IBM Almaden Research Center , San Jose , California 95120 , United States.
  • Parkin SSP; IBM Almaden Research Center , San Jose , California 95120 , United States.
  • Wong HP; IBM Almaden Research Center , San Jose , California 95120 , United States.
  • Pop E; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
ACS Nano ; 13(10): 11070-11077, 2019 Oct 22.
Article em En | MEDLINE | ID: mdl-31393698
ABSTRACT
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ∼1 nm-wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ∼85 µW at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin probe microscopy and scanning thermal microscopy. Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT plays a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters and highlight the significance of thermal engineering to improve device behavior.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article