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Is Charge-Transfer Doping Possible at the Interfaces of Monolayer VSe2 with MoO3 and K?
Zhang, Lei; He, Xiaoyue; Xing, Kaijian; Zhang, Wen; Tadich, Anton; Wong, Ping Kwan Johnny; Qi, Dong-Chen; Wee, Andrew T S.
Afiliação
  • Zhang L; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore.
  • He X; Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 6 Science Drive 2 , Singapore 117546 , Singapore.
  • Xing K; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore.
  • Zhang W; Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , China.
  • Tadich A; Department of Chemistry and Physics, La Trobe Institute for Molecular Science , La Trobe University , Melbourne , Victoria 3086 , Australia.
  • Wong PKJ; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore.
  • Qi DC; Department of Chemistry and Physics, La Trobe Institute for Molecular Science , La Trobe University , Melbourne , Victoria 3086 , Australia.
  • Wee ATS; Australian Synchrotron , 800 Blackburn Road , Clayton , Victoria 3168 , Australia.
ACS Appl Mater Interfaces ; 11(46): 43789-43795, 2019 Nov 20.
Article em En | MEDLINE | ID: mdl-31657202
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article