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Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory.
Yan, Xiaoyuan; Wang, Xueting; Wang, Dan; Li, Mengge; Guan, Liao; Yao, Jiadong; Niu, Xinyue; Xing, Boran; Yu, Ying; Tan, Mingqiu; Sha, Jian; Wang, Yewu.
Afiliação
  • Yan X; Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China.
Nanotechnology ; 31(11): 115209, 2020 Mar 13.
Article em En | MEDLINE | ID: mdl-31747641
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article