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Strong optical response and light emission from a monolayer molecular crystal.
Zhao, Huijuan; Zhao, Yingbo; Song, Yinxuan; Zhou, Ming; Lv, Wei; Tao, Liu; Feng, Yuzhang; Song, Biying; Ma, Yue; Zhang, Junqing; Xiao, Jun; Wang, Ying; Lien, Der-Hsien; Amani, Matin; Kim, Hyungjin; Chen, Xiaoqing; Wu, Zhangting; Ni, Zhenhua; Wang, Peng; Shi, Yi; Ma, Haibo; Zhang, Xiang; Xu, Jian-Bin; Troisi, Alessandro; Javey, Ali; Wang, Xinran.
Afiliação
  • Zhao H; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhao Y; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Song Y; Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210093, China.
  • Zhou M; Department of Electrical and Computer Engineering, University of Wisconsin, Madison, Madison, 53705, USA.
  • Lv W; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Tao L; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Feng Y; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Song B; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Ma Y; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhang J; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Xiao J; NSF Nanoscale Science and Engineering Center (NSEC), University of California, Berkeley, CA, 94720, USA.
  • Wang Y; NSF Nanoscale Science and Engineering Center (NSEC), University of California, Berkeley, CA, 94720, USA.
  • Lien DH; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Amani M; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Kim H; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Chen X; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Wu Z; School of Microelectronics, Xidian University, Xian, 710071, China.
  • Ni Z; Department of Physics, Southeast University, Nanjing, 211189, China.
  • Wang P; Department of Physics, Southeast University, Nanjing, 211189, China.
  • Shi Y; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Ma H; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhang X; Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210093, China. haibo@nju.edu.cn.
  • Xu JB; NSF Nanoscale Science and Engineering Center (NSEC), University of California, Berkeley, CA, 94720, USA.
  • Troisi A; Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, 999077, China.
  • Javey A; Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, U.K.
  • Wang X; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. ajavey@berkeley.edu.
Nat Commun ; 10(1): 5589, 2019 12 06.
Article em En | MEDLINE | ID: mdl-31811122
Excitons in two-dimensional (2D) materials are tightly bound and exhibit rich physics. So far, the optical excitations in 2D semiconductors are dominated by Wannier-Mott excitons, but molecular systems can host Frenkel excitons (FE) with unique properties. Here, we report a strong optical response in a class of monolayer molecular J-aggregates. The exciton exhibits giant oscillator strength and absorption (over 30% for monolayer) at resonance, as well as photoluminescence quantum yield in the range of 60-100%. We observe evidence of superradiance (including increased oscillator strength, bathochromic shift, reduced linewidth and lifetime) at room-temperature and more progressively towards low temperature. These unique properties only exist in monolayer owing to the large unscreened dipole interactions and suppression of charge-transfer processes. Finally, we demonstrate light-emitting devices with the monolayer J-aggregate. The intrinsic device speed could be beyond 30 GHz, which is promising for next-generation ultrafast on-chip optical communications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article