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Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors.
Linardy, Eric; Yadav, Dinesh; Vella, Daniele; Verzhbitskiy, Ivan A; Watanabe, Kenji; Taniguchi, Takashi; Pauly, Fabian; Trushin, Maxim; Eda, Goki.
Afiliação
  • Linardy E; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117551.
  • Yadav D; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546.
  • Vella D; NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 21 Lower Kent Ridge, Singapore 119077, Singapore.
  • Verzhbitskiy IA; Okinawa Institute of Science and Technology Graduate University, Onna-son, Okinawa 904-0495, Japan.
  • Watanabe K; Department of Physics, University of Konstanz, 78457 Konstanz, Germany.
  • Taniguchi T; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117551.
  • Pauly F; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546.
  • Trushin M; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117551.
  • Eda G; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546.
Nano Lett ; 20(3): 1647-1653, 2020 Mar 11.
Article em En | MEDLINE | ID: mdl-32078334
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article