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Colossal flexoresistance in dielectrics.
Park, Sung Min; Wang, Bo; Paudel, Tula; Park, Se Young; Das, Saikat; Kim, Jeong Rae; Ko, Eun Kyo; Lee, Han Gyeol; Park, Nahee; Tao, Lingling; Suh, Dongseok; Tsymbal, Evgeny Y; Chen, Long-Qing; Noh, Tae Won; Lee, Daesu.
Afiliação
  • Park SM; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Wang B; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
  • Paudel T; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
  • Park SY; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
  • Das S; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Kim JR; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
  • Ko EK; Department of Physics, Soongsil University, Seoul, 07027, Korea.
  • Lee HG; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Park N; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
  • Tao L; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Suh D; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
  • Tsymbal EY; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Chen LQ; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
  • Noh TW; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
  • Lee D; Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
Nat Commun ; 11(1): 2586, 2020 May 22.
Article em En | MEDLINE | ID: mdl-32444818
ABSTRACT
Dielectrics have long been considered as unsuitable for pure electrical switches; under weak electric fields, they show extremely low conductivity, whereas under strong fields, they suffer from irreversible damage. Here, we show that flexoelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to reversible switching between electrical states-insulating and conducting. Applying strain gradients with an atomic force microscope tip polarizes an ultrathin film of an archetypal dielectric SrTiO3 via flexoelectricity, which in turn generates non-destructive, strong electrostatic fields. When the applied strain gradient exceeds a certain value, SrTiO3 suddenly becomes highly conductive, yielding at least around a 108-fold decrease in room-temperature resistivity. We explain this phenomenon, which we call the colossal flexoresistance, based on the abrupt increase in the tunneling conductance of ultrathin SrTiO3 under strain gradients. Our work extends the scope of electrical control in solids, and inspires further exploration of dielectric responses to strong electromechanical fields.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article