Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate.

Choi, Yejoo; Shin, Jaemin; Moon, Seungjun; Shin, Changhwan

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO₂/Al₂O₃ Superlattice on Transparent ITO/Glass Substrate.

Choi, Yejoo; Shin, Jaemin; Moon, Seungjun; Shin, Changhwan.

Afiliação

Choi Y; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Shin J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Moon S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Shin C; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.

Micromachines (Basel) ; 11(5)2020 May 21.

Article em En | MEDLINE | ID: mdl-32455725

Palavras-chave

indium tin oxide (ITO); multilayer; non-volatile memory; threshold switching device; transparent device

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article