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High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength Emission.
Haggar, Jack Ih; Cai, Yuefei; Ghataora, Suneal S; Smith, Richard M; Bai, Jie; Wang, Tao.
Afiliação
  • Haggar JI; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
  • Cai Y; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
  • Ghataora SS; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
  • Smith RM; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
  • Bai J; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
  • Wang T; Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.
ACS Appl Electron Mater ; 2(8): 2363-2368, 2020 Aug 25.
Article em En | MEDLINE | ID: mdl-32904914
ABSTRACT
Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low efficiency are used to obtain a high modulation bandwidth. This paper demonstrates a record modulation bandwidth of 540 MHz for our semipolar green LEDs with a broad area. Semipolar yellow and amber LEDs with modulation bandwidths of 350 and 140 MHz, respectively, have also been reported, and are the longest wavelength III-nitride LEDs. These results agree with differential carrier lifetime measurements.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article