Low-coherence, high-power, high-directional electrically driven dumbbell-shaped cavity semiconductor laser at 635 nm.

An electrically driven dumbbell-shaped cavity semiconductor laser laterally confined by isolation and metal layers at 635 nm has been proposed. In the simulation, we systematically analyzed the Q-factors, mode intensity distributions, and directionality of the dumbbell-shaped cavity. A measured speckle contrast as low as 3.7%, emission divergence of 7.7°, and maximum output power of about 2.36 W were obtained in the experiment. Such a semiconductor laser with low coherence, high power, and high directivity may provide great potential application value in laser display and imaging.