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Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays.
Duan, Jingyu; Fogarty, Michael A; Williams, James; Hutin, Louis; Vinet, Maud; Morton, John J L.
Afiliação
  • Duan J; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.
  • Fogarty MA; Quantum Motion Technologies, Nexus, Discovery Way, Leeds LS2 3AA, United Kingdom.
  • Williams J; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.
  • Hutin L; Quantum Motion Technologies, Nexus, Discovery Way, Leeds LS2 3AA, United Kingdom.
  • Vinet M; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.
  • Morton JJL; CEA, LETI, Minatec Campus, F-38054 Grenoble, France.
Nano Lett ; 20(10): 7123-7128, 2020 Oct 14.
Article em En | MEDLINE | ID: mdl-32946244
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a 2 × n bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2 × 2 array and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, "floating" electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices, we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article