Efficient light extraction in subwavelength GaAs/AlGaAs nanopillars for nanoscale light-emitting devices.
Opt Express
; 28(22): 32302-32315, 2020 Oct 26.
Article
em En
| MEDLINE
| ID: mdl-33114919
ABSTRACT
This work reports on high extraction efficiency in subwavelength GaAs/AlGaAs semiconductor nanopillars. We achieve up to 37-fold enhancement of the photoluminescence (PL) intensity from sub-micrometer (sub-µm) pillars without requiring back reflectors, high-Q dielectric cavities, nor large 2D arrays or plasmonic effects. This is a result of a large extraction efficiency for nanopillars <500 nm width, estimated in the range of 33-57%, which is much larger than the typical low efficiency (â¼2%) of micrometer pillars limited by total internal reflection. Time-resolved PL measurements allow us to estimate the nonradiative surface recombination of fabricated pillars. We conclusively show that vertical-emitting nanopillar-based LEDs, in the best case scenario of both reduced surface recombination and efficient light out-coupling, have the potential to achieve notable large external quantum efficiency (â¼45%), whereas the efficiency of large µm-pillar planar LEDs, without further methods, saturates at â¼2%. These results offer a versatile method of light management in nanostructures with prospects to improve the performance of optoelectronic devices including nanoscale LEDs, nanolasers, single photon sources, photodetectors, and solar cells.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2020
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Article