Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction.
Nanotechnology
; 32(13): 135201, 2021 Jan 07.
Article
em En
| MEDLINE
| ID: mdl-33410417
ABSTRACT
Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification behavior of the heterojunction offers the modulation of channel carriers. The trap-free gate interface enables the hysteresis-free characteristics of the transistors, and promises an ideal SS of 64 mV/dec at room temperature. All the devices operate with a low threshold voltage less than -1 V with desirable saturation behavior. An OR logic gate is constructed with the dual-gated MoS2 transistors by varying the back and top gate voltage. The strategy present here is promising for the design of low-power digital electronics based on 2D materials.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2021
Tipo de documento:
Article