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Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist.
Kafri, Alonit; Dutta, Debopriya; Mukherjee, Subhrajit; Mohapatra, Pranab K; Ismach, Ariel; Koren, Elad.
Afiliação
  • Kafri A; Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
  • Dutta D; Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
  • Mukherjee S; Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
  • Mohapatra PK; Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel.
  • Ismach A; Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel.
  • Koren E; Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
ACS Appl Mater Interfaces ; 13(4): 5399-5405, 2021 Feb 03.
Article em En | MEDLINE | ID: mdl-33464810
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article