Analytical Model for the Channel Maximum Temperature in Ga<sub>2</sub>O<sub>3</sub> MOSFETs.

Jia, Xiaole; Hu, Haodong; Han, Genquan; Liu, Yan; Hao, Yue

Analytical Model for the Channel Maximum Temperature in Ga₂O₃ MOSFETs.

Jia, Xiaole; Hu, Haodong; Han, Genquan; Liu, Yan; Hao, Yue.

Afiliação

Jia X; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Hu H; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Han G; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. hangenquan@gmail.com.
Liu Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Hao Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nanoscale Res Lett ; 16(1): 29, 2021 Feb 10.

Article em En | MEDLINE | ID: mdl-33569659

Palavras-chave

Analytical model; Ga2O3; Maximum temperature; Thermal conductivity

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article