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Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.
Gadalla, Mena N; Greenspon, Andrew S; Defo, Rodrick Kuate; Zhang, Xingyu; Hu, Evelyn L.
Afiliação
  • Gadalla MN; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
  • Greenspon AS; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
  • Defo RK; Department of Physics, Harvard University, Cambridge, MA 02138.
  • Zhang X; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02421.
  • Hu EL; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138; ehu@seas.harvard.edu.
Proc Natl Acad Sci U S A ; 118(12)2021 Mar 23.
Article em En | MEDLINE | ID: mdl-33731479
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article