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Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress.
Zeng, Lunjie; Holmér, Jonatan; Dhall, Rohan; Gammer, Christoph; Minor, Andrew M; Olsson, Eva.
Afiliação
  • Zeng L; Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden.
  • Holmér J; Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden.
  • Dhall R; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Gammer C; Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, 8700 Leoben, Austria.
  • Minor AM; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Olsson E; Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States.
Nano Lett ; 21(9): 3894-3900, 2021 May 12.
Article em En | MEDLINE | ID: mdl-33914543
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article