Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene-Semiconducting Quantum Dot Devices.

Dutta, Riya; Pradhan, Avradip; Mondal, Praloy; Kakkar, Saloni; Sai, T Phanindra; Ghosh, Arindam; Basu, Jaydeep Kumar

Dutta, Riya; Pradhan, Avradip; Mondal, Praloy; Kakkar, Saloni; Sai, T Phanindra; Ghosh, Arindam; Basu, Jaydeep Kumar.

Afiliação

Dutta R; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Pradhan A; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Mondal P; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Kakkar S; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Sai TP; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Ghosh A; Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Basu JK; Department of Physics, Indian Institute of Science, Bangalore 560012, India.

ACS Appl Mater Interfaces ; 13(20): 24295-24303, 2021 May 26.

Article em En | MEDLINE | ID: mdl-33998798

Palavras-chave

diffusion length; graphene; quantum dot; quantum efficiency; scanning photocurrent microscopy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article