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High-Performance Anodic Vulcanization-Pretreated Gated P+-π-M-N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector.
Sun, Ju; Li, Nong; Jia, Qing-Xuan; Zhang, Xuan; Jiang, Dong-Wei; Wang, Guo-Wei; Niu, Zhi-Chuan.
Afiliação
  • Sun J; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
  • Li N; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Jia QX; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, China.
  • Zhang X; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
  • Jiang DW; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Wang GW; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, China.
  • Niu ZC; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Nanoscale Res Lett ; 16(1): 98, 2021 May 29.
Article em En | MEDLINE | ID: mdl-34052936
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article