Your browser doesn't support javascript.
loading
Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns.
Bengel, Christopher; Cüppers, Felix; Payvand, Melika; Dittmann, Regina; Waser, Rainer; Hoffmann-Eifert, Susanne; Menzel, Stephan.
Afiliação
  • Bengel C; Institute of Materials in Electrical Engineering and Information Technology II and Jülich Aachen Research Alliance (JARA)-Fit, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen University, Aachen, Germany.
  • Cüppers F; Peter Grünberg Institute (PGI 7 & 10), Forschungszentrum Jülich GmbH and JARA-Fit, Jülich, Germany.
  • Payvand M; Institute of Neuroinformatics, Eidgenössische Technische Hochschule (ETH) Zurich, Zurich, Switzerland.
  • Dittmann R; Peter Grünberg Institute (PGI 7 & 10), Forschungszentrum Jülich GmbH and JARA-Fit, Jülich, Germany.
  • Waser R; Institute of Materials in Electrical Engineering and Information Technology II and Jülich Aachen Research Alliance (JARA)-Fit, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen University, Aachen, Germany.
  • Hoffmann-Eifert S; Peter Grünberg Institute (PGI 7 & 10), Forschungszentrum Jülich GmbH and JARA-Fit, Jülich, Germany.
  • Menzel S; Peter Grünberg Institute (PGI 7 & 10), Forschungszentrum Jülich GmbH and JARA-Fit, Jülich, Germany.
Front Neurosci ; 15: 661856, 2021.
Article em En | MEDLINE | ID: mdl-34163323

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article