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Photoassisted Electron-Ion Synergic Doping Induced Phase Transition of n-VO2/p-GaN Thin-Film Heterojunction.
Li, Bowen; Li, Liang; Ren, Hui; Lu, Yuan; Peng, Fangfang; Chen, Yuliang; Hu, Changlong; Zhang, Guobin; Zou, Chongwen.
Afiliação
  • Li B; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Li L; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Ren H; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Lu Y; State Key Laboratory of Pulsed Power Laser Technology, NUDT, Hefei 230037, P. R. China.
  • Peng F; Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, NUDT, Hefei 230037, P. R. China.
  • Chen Y; Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Hu C; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Zhang G; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
  • Zou C; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
ACS Appl Mater Interfaces ; 13(36): 43562-43572, 2021 Sep 15.
Article em En | MEDLINE | ID: mdl-34468117
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article