Your browser doesn't support javascript.
loading
Controllable Doping in 2D Layered Materials.
Wang, Zhen; Xia, Hui; Wang, Peng; Zhou, Xiaohao; Liu, Chunsen; Zhang, Qinghua; Wang, Fang; Huang, Menglin; Chen, Shiyou; Wu, Peisong; Chen, Yunfeng; Ye, Jiafu; Huang, Shenyang; Yan, Hugen; Gu, Lin; Miao, Jinshui; Li, Tianxin; Chen, Xiaoshuang; Lu, Wei; Zhou, Peng; Hu, Weida.
Afiliação
  • Wang Z; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Xia H; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Wang P; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Zhou X; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Liu C; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Zhang Q; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Wang F; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Huang M; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Chen S; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Wu P; Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China.
  • Chen Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Ye J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Huang S; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Yan H; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Gu L; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Miao J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Li T; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Chen X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Lu W; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Zhou P; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Hu W; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Adv Mater ; 33(48): e2104942, 2021 Dec.
Article em En | MEDLINE | ID: mdl-34569099
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article