Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic.
ACS Nano
; 15(11): 18135-18141, 2021 Nov 23.
Article
em En
| MEDLINE
| ID: mdl-34705418
ABSTRACT
The functional diversification and adaptability of the elementary switching units of computational circuits are disruptive approaches for advancing electronics beyond the static capabilities of conventional complementary metal-oxide-semiconductor-based architectures. Thereto, in this work the one-dimensional nature of monocrystalline and monolithic Al-Ge-based nanowire heterostructures is exploited to deliver charge carrier polarity control and furthermore to enable distinct programmable negative differential resistance at runtime. The fusion of electron and hole conduction together with negative differential resistance in a universal adaptive transistor may enable energy-efficient reconfigurable circuits with multivalued operability that are inherent components of emerging artificial intelligence electronics.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2021
Tipo de documento:
Article