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Coexistence of Photoelectric Conversion and Storage in van der Waals Heterojunctions.
Jiang, Yucheng; He, Anpeng; Zhao, Run; Chen, Yu; Liu, Guozhen; Lu, Hao; Zhang, Jinlei; Zhang, Qing; Wang, Zhuo; Zhao, Chen; Long, Mingshen; Hu, Weida; Wang, Lin; Qi, Yaping; Gao, Ju; Wu, Quanying; Ge, Xiaotian; Ning, Jiqiang; Wee, Andrew T S; Qiu, Cheng-Wei.
Afiliação
  • Jiang Y; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • He A; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Zhao R; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Chen Y; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Liu G; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Lu H; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Zhang J; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Zhang Q; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
  • Wang Z; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
  • Zhao C; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
  • Long M; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Hu W; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Wang L; School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Qi Y; Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA.
  • Gao J; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Wu Q; School for Optoelectronic Engineering, Zaozhuang University, Shandong 277160, China.
  • Ge X; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China.
  • Ning J; Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China.
  • Wee ATS; Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China.
  • Qiu CW; Department of Physics, National University of Singapore, Singapore 117551, Singapore.
Phys Rev Lett ; 127(21): 217401, 2021 Nov 19.
Article em En | MEDLINE | ID: mdl-34860083
Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, have great potential for the development of ecofriendly and high-efficiency nanodevices, which shows valuable applications as photovoltaic cells, photodetectors, etc. However, the coexistence of photoelectric conversion and storage in a single device has not been achieved until now. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe_{2} layer and quasi-2D electron gas. After an optical illumination, the device stores the light-generated carriers for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs occurs at the end of their lifetime; in contrast, infinite-lifetime photocarriers can be generated and stored in CPC devices without recombination. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-photocarrier states below the critical temperature reaches as high as 10^{9}, with an external quantum efficiency of 93.8% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path toward the high-efficiency devices for photoelectric conversion and storage.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article