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2D-MA3 Sb2 I9 Back Surface Field for Efficient and Stable Perovskite Solar Cells.
Yuan, Haobo; Zhang, Jing; Yu, Luting; Guo, Tonghui; Zhang, Zequn; Wang, Yanyan; Shang, Minghui; Liu, Xiaohui; Hu, Ziyang; Zhu, Yuejin; Han, Liyuan.
Afiliação
  • Yuan H; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Zhang J; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Yu L; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Guo T; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Zhang Z; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Wang Y; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Shang M; School of Materials Science and Engineering, Ningbo University of Technology, Zhejiang, 315016, China.
  • Liu X; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Hu Z; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Zhu Y; Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211, China.
  • Han L; State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China.
Small Methods ; 5(6): e2001090, 2021 Jun.
Article em En | MEDLINE | ID: mdl-34927921
ABSTRACT
In perovskite solar cells (PSCs), a defective perovskite (PVK) surface and cliff-like energy offset at the interface always slow down the charge extraction; meanwhile, interface ion diffusion causes oxidation of the metal electrode, inducing device instability. Here, the in situ grown 2D-(CH3 NH2 )3 Sb2 I9 (MA3 Sb2 I9 ) on the back surface of MAPbI3 results in a more robust interface. MA3 Sb2 I9 changes the MAPbI3 surface to p-type and thus acts like a back surface field to drive charge extraction and suppress recombination, resulting in an obviously higher fill factor (FF) = 0.8 and power conversion efficiency (PCE) = 20.4% of SnO2 /MAPbI3 /MA3 Sb2 I9 /Spiro-OMeTAD (2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) PSC than the pure MAPbI3 device. More importantly, strong chemical bonding of SbI prohibits ion diffusion, largely enhancing the thermal stability and longtime stability. Here, special 2D-MA3 Sb2 I9 constructs' robust band alignment and chemical environment at the interface are highlighted for efficient and stable PSCs.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article