Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO<sub>x</sub> Passivation Layers.

Zhang, Wen; Fan, Zenghui; Shen, Ao; Dong, Chengyuan

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO_x Passivation Layers.

Zhang, Wen; Fan, Zenghui; Shen, Ao; Dong, Chengyuan.

Afiliação

Zhang W; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Fan Z; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Shen A; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Dong C; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

Micromachines (Basel) ; 12(12)2021 Dec 12.

Article em En | MEDLINE | ID: mdl-34945401

Palavras-chave

amorphous InGaZnO (a-IGZO); annealing atmosphere; oxygen vacancy; positive bias stress (PBS); thin-film transistor (TFT)

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article