Nanoscopic Electrolyte-Gated Vertical Organic Transistors with Low Operation Voltage and Five Orders of Magnitude Switching Range for Neuromorphic Systems.

Eckel, Christian; Lenz, Jakob; Melianas, Armantas; Salleo, Alberto; Weitz, R Thomas

Eckel, Christian; Lenz, Jakob; Melianas, Armantas; Salleo, Alberto; Weitz, R Thomas.

Afiliação

Eckel C; AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, 80539 Munich, Germany.
Lenz J; First Institute of Physics, Faculty of Physics, Georg-August-University, 37073 Göttingen, Germany.
Melianas A; AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, 80539 Munich, Germany.
Salleo A; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.
Weitz RT; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.

Nano Lett ; 22(3): 973-978, 2022 02 09.

Article em En | MEDLINE | ID: mdl-35049308

Assuntos

Eletrólitos; Transistores Eletrônicos; Condutividade Elétrica; Redes Neurais de Computação; Óxidos

Palavras-chave

conductance switching; electrolyte-gated; organic transistor; synaptic plasticity; two times synaptic plasticity; vertical structure

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Eletrólitos Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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