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FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector.
Xu, Wangqiong; Lu, Ying; Lei, Weibin; Sui, Fengrui; Ma, Ruru; Qi, Ruijuan; Huang, Rong.
Afiliação
  • Xu W; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
  • Lu Y; College of Physics and Electronic Engineering, Qujing Normal University, Qujing 655011, China.
  • Lei W; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
  • Sui F; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
  • Ma R; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
  • Qi R; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
  • Huang R; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
Micromachines (Basel) ; 13(1)2021 Dec 22.
Article em En | MEDLINE | ID: mdl-35056176
ABSTRACT
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW-1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article