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High-Polarizability Organic Ferroelectric Materials Doping for Enhancing the Built-In Electric Field of Perovskite Solar Cells Realizing Efficiency over 24.
Chen, Weijie; Liu, Shuo; Li, Qingqing; Cheng, Qinrong; He, Baosheng; Hu, Zhijun; Shen, Yunxiu; Chen, Haiyang; Xu, Guiying; Ou, XueMei; Yang, Heyi; Xi, Jiachen; Li, Yaowen; Li, Yongfang.
Afiliação
  • Chen W; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Liu S; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Li Q; School of Optoelectronics Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China.
  • Cheng Q; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • He B; School of Optoelectronics Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China.
  • Hu Z; School of Optoelectronics Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China.
  • Shen Y; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Chen H; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Xu G; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Ou X; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Yang H; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Xi J; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Li Y; Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
  • Li Y; State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Soochow University, Suzhou, 215123, China.
Adv Mater ; 34(14): e2110482, 2022 Apr.
Article em En | MEDLINE | ID: mdl-35122342
ABSTRACT
The built-in electric field (BEF) intensity of silicon heterojunction solar cells can be easily enhanced by selective doping to obtain high power conversion efficiencies (PCEs), while it is challenging for perovskite solar cells (pero-SCs) because of the difficulty in doping perovskites in a controllable way. Herein, an effective method is reported to enhance the BEF of FA0.92 MA0.08 PbI3 perovskite by doping an organic ferroelectric material, poly(vinylidene fluoride)dabcoHReO4 (PVDFDH) with high polarizability, that can be driven even by the BEF of the device itself. The polarization of PVDFDH produces an additional electric field, which is maintained permanently, in a direction consistent with that of the BEF of the pero-SC. The BEF superposition can more sufficiently drive the charge-carrier transport and extraction, thus suppressing the nonradiative recombination occurring in the pero-SCs. Moreover, the PVDFDH dopant benefits the formation of a mesoporous PbI2 film, via a typical two-step processing method, thereby promoting perovskite growth with high crystallinity and a few defects. The resulting pero-SC shows a promising PCE of 24.23% for a 0.062 cm2 device (certified PCE of 23.45%), and a remarkable PCE of 22.69% for a 1 cm2 device, along with significantly improved moisture resistances and operational stabilities.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article