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Antiferroelectric negative capacitance from a structural phase transition in zirconia.
Hoffmann, Michael; Wang, Zheng; Tasneem, Nujhat; Zubair, Ahmad; Ravindran, Prasanna Venkatesan; Tian, Mengkun; Gaskell, Anthony Arthur; Triyoso, Dina; Consiglio, Steven; Tapily, Kandabara; Clark, Robert; Hur, Jae; Pentapati, Sai Surya Kiran; Lim, Sung Kyu; Dopita, Milan; Yu, Shimeng; Chern, Winston; Kacher, Josh; Reyes-Lillo, Sebastian E; Antoniadis, Dimitri; Ravichandran, Jayakanth; Slesazeck, Stefan; Mikolajick, Thomas; Khan, Asif Islam.
Afiliação
  • Hoffmann M; NaMLab gGmbH, 01187, Dresden, Germany. hoffmann@berkeley.edu.
  • Wang Z; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA. hoffmann@berkeley.edu.
  • Tasneem N; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Zubair A; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Ravindran PV; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA.
  • Tian M; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Gaskell AA; Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Triyoso D; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Consiglio S; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA.
  • Tapily K; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA.
  • Clark R; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA.
  • Hur J; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA.
  • Pentapati SSK; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Lim SK; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Dopita M; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Yu S; Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116, Prague, Czech Republic.
  • Chern W; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Kacher J; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA.
  • Reyes-Lillo SE; Izentis LLC, PO Box 397002, Cambridge, MA, 02139, USA.
  • Antoniadis D; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
  • Ravichandran J; Departamento de Ciencias Físicas, Universidad Andres Bello, Santiago, 837-0136, Chile.
  • Slesazeck S; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA.
  • Mikolajick T; Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA.
  • Khan AI; NaMLab gGmbH, 01187, Dresden, Germany.
Nat Commun ; 13(1): 1228, 2022 Mar 09.
Article em En | MEDLINE | ID: mdl-35264570
ABSTRACT
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO2 and ZrO2) are different A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO2 gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO2 and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article