The onset of tapering in the early stage of growth of a nanowire.
Nanotechnology
; 33(25)2022 Apr 01.
Article
em En
| MEDLINE
| ID: mdl-35276681
ABSTRACT
The early stage of growth of semiconductor nanowires is studied in the case where the sidewall adatoms have a short diffusion length due to a strong desorption. Experimental results are described for the growth of ZnSe nanowires by molecular beam epitaxy. They are discussed and interpreted using the Burton-Cabrera-Frank description of the propagation of steps along the sidewalls, and compared to other II-VI and III-V nanowires. The role of the growth parameters and the resulting shape of the nanowires (cylinder, cone, or both combined) are highlighted.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2022
Tipo de documento:
Article