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Electronic and Excitonic Processes in Quantum Dot Light-Emitting Diodes.
Yu, Panlong; Yuan, Qilin; Zhao, Jialong; Zhang, Hanzhuang; Ji, Wenyu.
Afiliação
  • Yu P; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin 130023, People's Republic of China.
  • Yuan Q; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin 130023, People's Republic of China.
  • Zhao J; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, People's Republic of China.
  • Zhang H; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin 130023, People's Republic of China.
  • Ji W; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin 130023, People's Republic of China.
J Phys Chem Lett ; 13(13): 2878-2884, 2022 Apr 07.
Article em En | MEDLINE | ID: mdl-35333050
ABSTRACT
A modified Langevin model has been proposed to study the electronic and excitonic dynamic processes in quantum dot light-emitting diodes (QLEDs), and the electroluminescence onset processes of the QLEDs under different charge-injection conditions have been explored. The simulation results are in good agreement with experimental curves, confirming the feasibility of this model. It is demonstrated that the formation of an exciton on the quantum dots (QDs) with one electron injected first followed by one hole is much more effective than that with the reverse sequence. That is, charging a QD with one electron first is more favorable for device performance enhancement, which is attributed to the low (high) Auger recombination rate of negative (positive) trions of commonly used type I QDs. Additionally, we demonstrate that enough electron injection is one of the prerequisites for high-performance QLEDs based on these type I QDs.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article