Improved Thermoelectric Performance of p-Type Argyrodite Cu<sub>8</sub>GeSe<sub>6</sub> via the Simultaneous Engineering of the Electronic and Phonon Transports.

Yang, Chao; Luo, Yong; Xia, Yafen; Fang, Teng; Du, Zhengliang; Li, Xie; Cui, Jiaolin

Improved Thermoelectric Performance of p-Type Argyrodite Cu₈GeSe₆ via the Simultaneous Engineering of the Electronic and Phonon Transports.

Yang, Chao; Luo, Yong; Xia, Yafen; Fang, Teng; Du, Zhengliang; Li, Xie; Cui, Jiaolin.

Afiliação

Yang C; School of Materials Science and Physics, School of Chemical Engineering & Technology, China University of Mining and Technology, Xuzhou 221116, China.
Luo Y; School of Materials & Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China.
Xia Y; School of Materials Science and Physics, School of Chemical Engineering & Technology, China University of Mining and Technology, Xuzhou 221116, China.
Fang T; Commercial School, Zhejiang Fashion Institute of Technology, Ningbo 315211, China.
Du Z; School of Mechanical and Electrical Engineering, Shandong University (Weihai), Wenhuaxi Road 180, 264209 Weihai, China.
Li X; School of Materials & Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China.
Cui J; School of Materials & Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China.

ACS Appl Mater Interfaces ; 14(14): 16330-16337, 2022 Apr 13.

Article em En | MEDLINE | ID: mdl-35357808

Palavras-chave

argyrodite-type Cu8GeSe6; band structure; carrier concentration; lattice thermal conductivity; thermoelectric performance

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article