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Tetracoordinate Boron-Based Multifunctional Chiral Thermally Activated Delayed Fluorescence Emitters.
Zhou, Ling; Ni, Fan; Li, Nan; Wang, Kai; Xie, Guohua; Yang, Chuluo.
Afiliação
  • Zhou L; Sauvage Center for Molecular Sciences, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, P. R. China.
  • Ni F; College of Instrument Science and Opto-electronic Engineering, Hefei University of Technology, Hefei, 230009, P. R. China.
  • Li N; State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China.
  • Wang K; State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China.
  • Xie G; Sauvage Center for Molecular Sciences, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, P. R. China.
  • Yang C; Sauvage Center for Molecular Sciences, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, P. R. China.
Angew Chem Int Ed Engl ; 61(28): e202203844, 2022 Jul 11.
Article em En | MEDLINE | ID: mdl-35441761
ABSTRACT
Purely organic emitters have shown great potential but still suffer from low efficiency in near-infrared organic light-emitting diodes (NIR-OLEDs) due to the intensive non-radiative recombination. In this contribution, two pairs of thermally activated delayed fluorescence (TADF) enantiomers (R/S-DOBP and R/S-HDOBP) with tetracoordinate boron geometries were designed and synthesized. The TADF emitters simultaneously showed aggregation-induced emission, circularly polarized luminescence, high-contrast mechanochromism, and piezochromism behaviors. More importantly, R/S-DOBP and R/S-HDOBP revealed high photoluminescence quantum yields and efficient reverse intersystem crossing in neat films. The nondoped solution-processed OLEDs based on these unique emitters revealed the NIR emission (peaking at 716 nm) with a maximum external quantum efficiency of 1.9 % and high exciton utilization efficiency of 86 %, which represent one of the best solution-processed nondoped NIR-OLEDs.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article