Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA µm-1.
Nano Lett
; 22(9): 3770-3776, 2022 May 11.
Article
em En
| MEDLINE
| ID: mdl-35467885
ABSTRACT
High-mobility and air-stable two-dimensional (2D) Bi2O2Se semiconductor holds promise as an alternative fast channel material for next-generation transistors. However, one of the key challenges remaining in 2D Bi2O2Se is to prepare high-quality crystals to fabricate the high-performance transistors with a high on-state current density. Here, we present the free-standing growth of strain-free 2D Bi2O2Se crystals. An ultrahigh Hall mobility of 160â¯000 cm2 V-1 s-1 is measured in strain-free Bi2O2Se crystals at 2 K, which enables the observation of Shubnikov-de Haas quantum oscillations and shows substantially higher (>4 times) mobility over previous in-plane 2D crystals. The fabricated 2D transistors feature an on-off current ratio of â¼106 and a record-high on-state current density of â¼1.33 mA µm-1, which is comparable to that of commercial Si and Ge n-type field-effect transistors (FETs) for similar channel length. Strain-free 2D Bi2O2Se provides a promising material platform for studying novel quantum phenomena and exploration of high-performance low-power electronics.
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MEDLINE
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En
Ano de publicação:
2022
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Article