Lasing action in a strongly coupled silicon nanowire pair.
Opt Lett
; 47(9): 2246-2249, 2022 May 01.
Article
em En
| MEDLINE
| ID: mdl-35486771
ABSTRACT
High-index dielectric nanostructures are of particular interest for nanoscale lasing due to their low absorption losses. However, the relatively weak near-field restricts the isolated dielectric cavities as low-threshold integrated on-chip laser sources. Here, we demonstrate lasing action in a silicon nanowire pair with 32â
nm gap coated with dye-doped shell on the silicon-on-insulator platform. It is found that the quality factor Q is dominated by the coupling of the silicon nanowire pair, which depends on the gap size, the nanowire width, and the dye thickness. A lasing peak at the wavelength of 529â
nm with FWHM of 0.6â
nm is experimentally realized by the Si nanowire pair width, and the corresponding pumping power threshold is â¼34 µW/cm2. The proposed strategy, based on the well-established Si planar process, lays the groundwork for practical integrated nanolasers that have potential applications in photonic circuits.
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MEDLINE
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En
Ano de publicação:
2022
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Article