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Stimulating and Manipulating Robust Circularly Polarized Photoluminescence in Achiral Hybrid Perovskites.
Zhan, Guixiang; Zhang, Junran; Zhang, Linghai; Ou, Zhenwei; Yang, Hongyu; Qian, Yuchi; Zhang, Xu; Xing, Ziyue; Zhang, Le; Li, Congzhou; Zhong, Jingxian; Yuan, Jiaxiao; Cao, Yang; Zhou, Dawei; Chen, Xiaolong; Ma, Huifang; Song, Xuefen; Zha, Chenyang; Huang, Xiao; Wang, Jianpu; Wang, Ti; Huang, Wei; Wang, Lin.
Afiliação
  • Zhan G; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zhang J; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zhang L; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Ou Z; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
  • Yang H; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Qian Y; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zhang X; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Xing Z; Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
  • Zhang L; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
  • Li C; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zhong J; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Yuan J; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Cao Y; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zhou D; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Chen X; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
  • Ma H; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Song X; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Zha C; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Huang X; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Wang J; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Wang T; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
  • Huang W; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China.
  • Wang L; Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
Nano Lett ; 22(10): 3961-3968, 2022 May 25.
Article em En | MEDLINE | ID: mdl-35507685
Circularly polarized light (CPL) is essential for optoelectronic and chiro-spintronic applications. Hybrid perovskites, as star optoelectronic materials, have demonstrated CPL activity, which is, however, mostly limited to chiral perovskites. Here, we develop a simple, general, and efficient strategy to stimulate CPL activity in achiral perovskites, which possess rich species, efficient luminescence, and tunable bandgaps. With the formation of van der Waals heterojunctions between chiral and achiral perovskites, a nonequilibrium spin population and thus CPL activity are realized in achiral perovskites by receiving spin-polarized electrons from chiral perovskites. The polarization degree of room-temperature CPL in achiral perovskites is at least one order of magnitude higher than in chiral ones. The CPL polarization degree and emission wavelengths of achiral perovskites can be flexibly designed by tuning chemical compositions, operating temperature, or excitation wavelengths. We anticipate that unlimited types of achiral perovskites can be endowed with CPL activity, benefiting their applications in integrated CPL sources and detectors.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article