High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures.
RSC Adv
; 10(40): 23662-23667, 2020 Jun 19.
Article
em En
| MEDLINE
| ID: mdl-35517344
ABSTRACT
Two-dimensional (2D) ß-In2S3 is a natural defective n-type semiconductor attracting considerable interest for its excellent photoelectronic performance. However, ß-In2S3 based photodetectors exhibited a weak near-infrared photoresponse compared to visible wavelength in past reports. In this work, high-quality 2D ß-In2S3 nanosheets were prepared by a space-confined chemical vapor deposition (CVD) method. Graphene/In2S3 van der Waals heterostructures were constructed to realize an enhanced near-infrared photodetection performance by a series of transfer processes. The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited a better infrared performance of high photoresponsivity (R light) of 0.49 mA W-1, external quantum efficiency (EQE) of 0.07%, and detectivity (D*) of 3.05 × 107 jones using an 808 nm laser.
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Coleções:
01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2020
Tipo de documento:
Article