Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of <i>h</i>-BN.

Sasaki, Taro; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Nishimura, Tomonori; Nagashio, Kosuke

Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN.

Sasaki, Taro; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Nishimura, Tomonori; Nagashio, Kosuke.

Afiliação

Sasaki T; Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
Ueno K; Department of Chemistry, Saitama University, Saitama 338-8570, Japan.
Nishimura T; Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
Nagashio K; Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

ACS Appl Mater Interfaces ; 14(22): 25659-25669, 2022 Jun 08.

Article em En | MEDLINE | ID: mdl-35604943

Palavras-chave

2D materials; nonvolatile memory; short-time dielectric breakdown strength; time-dependent dielectric breakdown; ultrafast operation; van der Waals heterostructure

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article