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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subµm Channel Lengths.
Bae, Soo-Hyun; Yang, Jong-Heon; Kim, Yong-Hae; Kwon, Young Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Hwang, Chi-Sun; Yoon, Sung-Min.
Afiliação
  • Bae SH; Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea.
  • Yang JH; ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea.
  • Kim YH; ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea.
  • Kwon YH; NCD Co. Ltd, Daejeon 34015, Korea.
  • Seong NJ; NCD Co. Ltd, Daejeon 34015, Korea.
  • Choi KJ; NCD Co. Ltd, Daejeon 34015, Korea.
  • Hwang CS; ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea.
  • Yoon SM; Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea.
ACS Appl Mater Interfaces ; 14(27): 31010-31023, 2022 Jul 13.
Article em En | MEDLINE | ID: mdl-35785988
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article