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Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device.
Ho, Tsz-Lung; Ding, Keda; Lyapunov, Nikolay; Suen, Chun-Hung; Wong, Lok-Wing; Zhao, Jiong; Yang, Ming; Zhou, Xiaoyuan; Dai, Ji-Yan.
Afiliação
  • Ho TL; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Ding K; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Lyapunov N; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Suen CH; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Wong LW; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhao J; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Yang M; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhou X; College of Physics, Chongqing University, Chongqing 401331, China.
  • Dai JY; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
Nanomaterials (Basel) ; 12(13)2022 Jun 21.
Article em En | MEDLINE | ID: mdl-35807964
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article