Biomodulator of Diode Laser Irradiation on Odontoblast-Like Cells by Expression of Vascular Endothelial Growth Factor-A and Transforming Growth Factor-ß1.

ABSTRACT

OBJECTIVE: This study aimed to prove that the effect of diode laser 650-nm irradiation to the expression of vascular endothelial growth factor (VEGF)-A and transforming growth factor (TGF)-ß1 plays important roles in dental pulp-regulating cell proliferation, differentiation, and revascularization. MATERIALS AND METHODS: The research was performed by randomized posttest only control group design using Rattus norvegicus. A total of 48 samples were provided and divided into eight groups of 6 samples each with a random-sample allocation. Each group were prepared, and perforation of maxillary first molar were done. In control groups (groups 1-4), glass ionomer cement (GIC) was used to restore the teeth, while in laser groups (groups 5-8), the teeth were irradiated with diode laser 650 nm for 40 seconds before application of GIC. Half of the groups (groups 1, 2, 5, and 6) were necropsied in 7 days, and the rest (groups 3, 4, 7, and 8) were necropsied in 14 days. Immunohistochemistry (IHC) evaluation were implemented to check the expression of both VEGF-A and TGF-ß1. STATISTICAL ANALYSIS: Both data of VEGF-A and TGF-ß1 expression were analyzed using a one-way ANOVA (α = 0.05) with SPSS statistical software. RESULTS: The study showed that the diode laser 650-nm irradiation increased expression of VEGF-A and TGF-ß1, and there was a significant difference between diode laser and control group on VEGF-A expression (p = 0.001) and TGF- ß1 (p = 0.000) on days 7 and 14. CONCLUSION: Diode laser 650 nm with 40-second irradiation time shows increment from day 7 to day 14 reflecting increase in pulp healing by modulating VEGF-A and TGF-ß1 expression since days 7 to 14.