Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of &#8776;78 cm2 V-1 s-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays.

Rabbi, Md Hasnat; Lee, Suhui; Sasaki, Daichi; Kawashima, Emi; Tsuruma, Yuki; Jang, Jin

Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm² V^-1 s^-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays.

Rabbi, Md Hasnat; Lee, Suhui; Sasaki, Daichi; Kawashima, Emi; Tsuruma, Yuki; Jang, Jin.

Afiliação

Rabbi MH; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, Korea.
Lee S; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, Korea.
Sasaki D; Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Chiba, 299-0293, Japan.
Kawashima E; Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Chiba, 299-0293, Japan.
Tsuruma Y; Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Chiba, 299-0293, Japan.
Jang J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, Korea.

Small Methods ; 6(9): e2200668, 2022 Sep.

Article em En | MEDLINE | ID: mdl-35879024

Palavras-chave

InGaO; high stability; hotplate crystallization; polycrystalline oxide; post-fabrication annealing; thin-film transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article