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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9.
Noh, Gichang; Song, Hwayoung; Choi, Heenang; Kim, Mingyu; Jeong, Jae Hwan; Lee, Yongjoon; Choi, Min-Yeong; Oh, Saeyoung; Jo, Min-Kyung; Woo, Dong Yeon; Jo, Yooyeon; Park, Eunpyo; Moon, Eoram; Kim, Tae Soo; Chai, Hyun-Jun; Huh, Woong; Lee, Chul-Ho; Kim, Cheol-Joo; Yang, Heejun; Song, Senugwoo; Jeong, Hu Young; Kim, Yong-Sung; Lee, Gwan-Hyoung; Lim, Jongsun; Kim, Chang Gyoun; Chung, Taek-Mo; Kwak, Joon Young; Kang, Kibum.
Afiliação
  • Noh G; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Song H; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
  • Choi H; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Kim M; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
  • Jeong JH; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Lee Y; Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea.
  • Choi MY; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Oh S; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
  • Jo MK; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
  • Woo DY; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Jo Y; Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea.
  • Park E; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
  • Moon E; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
  • Kim TS; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
  • Chai HJ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Huh W; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Lee CH; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Kim CJ; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea.
  • Yang H; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea.
  • Song S; Advanced Materials Research Division, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
  • Jeong HY; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
  • Kim YS; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
  • Lee GH; Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea.
  • Lim J; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
  • Kim CG; Low-Dimensional Material Team, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea.
  • Chung TM; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
  • Kwak JY; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
  • Kang K; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
Adv Mater ; 34(41): e2204982, 2022 Oct.
Article em En | MEDLINE | ID: mdl-36000232

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article