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High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure.
Lei, Liang; Dong, Bo; Hu, Yuxuan; Lei, Yisong; Wang, Zhizhong; Ruan, Shuangchen.
Afiliação
  • Lei L; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Dong B; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Hu Y; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Lei Y; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Wang Z; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Ruan S; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
Sensors (Basel) ; 22(17)2022 Aug 28.
Article em En | MEDLINE | ID: mdl-36080938
ABSTRACT
A high-frequency surface acoustic wave (SAW) resonator, based on sandwiched interdigital transducer (IDT), is presented. The resonator has the structure of diamond/AlN/IDT/AlN/diamond, with Si as the substrate. The results show that its phase velocity and electromechanical coupling coefficient are both significantly improved, compared with that of the traditional interdigital transduce-free surface structure. The M2 mode of the sandwiched structure can excite an operation frequency up to 6.15 GHz, with an electromechanical coupling coefficient of 5.53%, phase velocity of 12,470 m/s, and temperature coefficient of frequency of -6.3 ppm/°C. This structure provides a new ideal for the design of high-performance and high-frequency SAW devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article