Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS<sub>2</sub>.

Sun, Zheng; Pang, Chin-Sheng; Wu, Peng; Hung, Terry Y T; Li, Ming-Yang; Liew, San Lin; Cheng, Chao-Ching; Wang, Han; Wong, H-S Philip; Li, Lain-Jong; Radu, Iuliana; Chen, Zhihong; Appenzeller, Joerg

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS₂.

Sun, Zheng; Pang, Chin-Sheng; Wu, Peng; Hung, Terry Y T; Li, Ming-Yang; Liew, San Lin; Cheng, Chao-Ching; Wang, Han; Wong, H-S Philip; Li, Lain-Jong; Radu, Iuliana; Chen, Zhihong; Appenzeller, Joerg.

ACS Nano ; 16(9): 14942-14950, 2022 Sep 27.

Article em En | MEDLINE | ID: mdl-36094410

Palavras-chave

Monolayer TMD materials; WS2; field-effect transistors; statistical study; ultrascaled dielectric; ultrashort channel length

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article